irfl1006 hexfet ? power mosfet pd - 91876 s d g v dss = 60v r ds(on) = 0.22 w i d = 1.6a fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the sot-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. its unique package design allows for easy automatic pick- and-place as with other sot or soic packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. power dissipation of 1.0w is possible in a typical surface mount application. 3/29/99 description l surface mount l advanced process technology l dynamic dv/dt rating l fast switching l fully avalanche rated sot-223 * when mounted on fr-4 board using minimum recommended footprint. ** when mounted on 1 inch square copper board, for comparison with other smd devices. parameter typ. max. units r q ja junction-to-amb. (pcb mount, steady state)* 90 120 r q ja junction-to-amb. (pcb mount, steady state)** 50 60 thermal resistance c/w parameter max. units i d @ t a = 25c continuous drain current, v gs @ 10v** 2.3 i d @ t a = 25c continuous drain current, v gs @ 10v* 1.6 i d @ t a = 70c continuous drain current, v gs @ 10v* 1.3 i dm pulsed drain current ? 6.4 p d @t a = 25c power dissipation (pcb mount)** 2.1 w p d @t a = 25c power dissipation (pcb mount)* 1.0 w linear derating factor (pcb mount)* 8.3 mw/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 54 mj i ar avalanche current ? 1.6 a e ar repetitive avalanche energy ? * 0.1 mj dv/dt peak diode recovery dv/dt ? 5.0 v/ns t j, t stg junction and storage temperature range -55 to + 150 c absolute maximum ratings a www.irf.com 1
irfl1006 2 www.irf.com ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) ? i sd 1.6a, di/dt 260a/s, v dd v (br)dss , t j 150c notes: ? starting t j = 25c, l = 42 mh r g = 25 w , i as = 1.6a. (see figure 12) ? pulse width 300s; duty cycle 2%. parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 1.6a, v gs = 0v ? t rr reverse recovery time CCC 31 47 ns t j = 25c, i f = 1.6a q rr reverse recoverycharge CCC 46 68 nc di/dt = 100a/s ? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics CCC CCC CCC CCC 6.4 1.6 a electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 60 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.057 CCC v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance CCC CCC 0.22 w v gs = 10v, i d = 1.6a ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 3.0 CCC CCC s v ds = 25v, i d = 1.6a CCC CCC 25 a v ds = 60v, v gs = 0v CCC CCC 250 v ds = 48v, v gs = 0v, t j = 125c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse leakage CCC CCC -100 na v gs = -20v q g total gate charge CCC CCC 8.0 i d = 1.6a q gs gate-to-source charge CCC CCC 1.7 nc v ds = 48v q gd gate-to-drain ("miller") charge CCC CCC 3.3 v gs = 10v, see fig. 6 and 9 ? t d(on) turn-on delay time CCC 7.4 CCC v dd = 30v t r rise time CCC 18 CCC i d = 1.6a t d(off) turn-off delay time CCC 18 CCC r g = 49 w t f fall time CCC 17 CCC r d = 19 w , see fig. 10 ? c iss input capacitance CCC 160 CCC v gs = 0v c oss output capacitance CCC 55 CCC pf v ds = 25v c rss reverse transfer capacitance CCC 19 CCC ? = 1.0mhz, see fig. 5 i gss ns i dss drain-to-source leakage current
irfl1006 www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 0.1 1 10 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source volta g e (v) i , drain-to-source current (a) ds d 4.5v 0.1 1 10 4.0 5.0 6.0 7.0 8.0 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 1.6a
irfl1006 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 2 4 6 8 10 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 1.6a v = 12v ds v = 30v ds v = 48v ds 0.1 1 10 0.4 0.6 0.8 1.0 1.2 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 1 10 100 1000 operation in this area limited by r ds(on) sin g le pulse t t = 150 c = 25 c j c v , drain-to-source volta g e (v) i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms 1 10 100 0 60 120 180 240 300 v , drain-to-source volta g e (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss g s g d , ds rss g d oss ds g d c iss c oss c rss
irfl1006 www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 t , case temperature ( c) i , drain current (a) c d fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10v + - v dd
irfl1006 6 www.irf.com fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms t p v (br)dss i as fig 12a. unclamped inductive test circuit q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 10 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform 25 50 75 100 125 150 0 20 40 60 80 100 120 140 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 0.72a 1.0a 1.6a r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v
irfl1006 www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? *
irfl1006 8 www.irf.com package outline sot-223 (to-261aa) outline sot-223 part marking information date code (yw w ) y = last digit of the year ww = week bottom part number top international re ctifie r log o exa mple : this is an irfl014 w a fer lo t co de xxxxxx 314 fl014
irfl1006 www.irf.com 9 sot-223 outline tape & reel information 4.10 (.161) 3.90 (.154) 1.85 (.072) 1.65 (.065) 2.05 (.080) 1.95 (.077) 12.10 (.475) 11.90 (.469) 7.10 (.279) 6.90 (.272) 1.60 (.062) 1.50 (.059) typ . 7.55 (.297) 7.45 (.294) 7.60 (.299) 7.40 (.292) 2.30 (.090) 2.10 (.083) 16.30 (.641) 15.70 (.619) 0.35 (.013) 0.25 (.010) feed direction tr 13.20 (.519) 12.80 (.504) 50.00 (1.969) m in . 330.00 (13.000) max. notes : 1. controlling dimension: millimeter. 2. outline conforms to eia-481 & eia-541. 3. each o330.00 (13.00) reel co ntains 2,500 devices. 3 notes : 1. outline comforms to eia-418-1. 2. controlling dimension: millimeter.. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. 15.40 (.607) 11.90 (.469) 18.40 (.724) m ax . 14.40 (.566) 12.40 (.488) 4 4 world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 http://www.irf.com/ data and specifications subject to change without notice. 3/99
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